80812 tkim/51910pa tkim tc-00002293 no. a1713-1/7 http://onsemi.com semiconductor components industries, llc, 2013 july, 2013 vec2415 n-channel power mosfet 60v, 3a, 80m , dual vec8 stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty. features ? low on-resistance ? composite type facilitating high-density mounting ? 4v drive ? mounting high 0.75mm ? protection diode in speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v dss 60 v gate-to-source voltage v gss 20 v drain current (dc) i d 3a drain current (pulse) i dp pw 10 s, duty cycle 1% 12 a allowable power dissipation p d when mounted on ceramic substrate (900mm 2 0.8mm) 1unit 0.9 w total dissipation p t when mounted on ceramic substrate (900mm 2 0.8mm) 1.0 w channel temperature tch 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7012-002 ordering number : ena1713a 2.9 0.65 2.8 0.25 0.25 2.3 0.75 0.07 0.3 1234 8765 0.15 1 : source1 2 : gate1 3 : source2 4 : gate2 5 : drain2 6 : drain2 7 : drain1 8 : drain1 vec8 VEC2415-TL-E product & package information ? package : vec8 ? jeita, jedec : - ? minimum packing quantity : 3,000 pcs./reel packing type : tl marking electrical connection tl un lot no. 87 6 5 1234
vec2415 no. a1713-2/7 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain-to-source breakdown voltage v (br)dss i d = 1 ma, v gs =0v 60 v zero-gate voltage drain current i dss v ds = 60 v, v gs =0v 1 a gate-to-source leakage current i gss v gs =16v, v ds =0v 10 a cutoff voltage v gs (off) v ds =10v, i d =1ma 1.2 2.6 v forward transfer admittance | yfs | v ds =10v, i d = 1.5 a 2.6 s static drain-to-source on-state resistance r ds (on)1 i d = 1.5 a, v gs =10v 62 80 m r ds (on)2 i d = 0.75 a, v gs =4.5v 76 106 m r ds (on)3 i d = 0.75 a, v gs =4v 83 116 m input capacitance ciss v ds =20v, f=1mhz 505 pf output capacitance coss 57 pf reverse transfer capacitance crss 37 pf turn-on delay time t d (on) see speci ed test circuit. 7.3 ns rise time t r 7.5 ns turn-off delay time t d (off) 41 ns fall time t f 22 ns total gate charge qg v ds =30v, v gs =10v, i d =3a 10 nc gate-to-source charge qgs 1.6 nc gate-to-drain ?miller? charge qgd 2.1 nc diode forward voltage v sd i s =3a, v gs =0v 0.81 1.2 v switching time test circuit ordering information device package shipping memo VEC2415-TL-E vec8 3,000pcs./reel pb free pw=10 s d.c. 1% p. g 50 g s d i d =1.5a r l =20 v dd =30v v out vec2415 v in 10v 0v v in
vec2415 no. a1713-3/7 sw time -- i d ciss, coss, crss -- v ds i s -- v sd drain current, i d -- a switching time, sw time -- ns diode forward voltage, v sd -- v source current, i s -- a drain-to-source voltage, v ds -- v ciss, coss, crss -- pf drain current, i d -- a r ds (on) -- ta static drain-to-source on-state resistance, r ds (on) -- m ambient temperature, ta -- c r ds (on) -- v gs static drain-to-source on-state resistance, r ds (on) -- m gate-to-source voltage, v gs -- v 5 3 2 3 2 7 7 5 10 it13795 it13793 0.1 1.0 23 57 23 57 02040 10 30 50 60 100 10 2 1000 7 5 3 2 7 5 3 it13796 it13794 0.2 0.4 0.6 0.8 1.0 1.2 0.01 0.1 7 5 3 2 2 1.0 7 5 3 2 v gs =0v --25 c 25 c ta=75 c t d (on) t d (off) t f t r v dd =30v v gs =10v ciss coss crss f=1mhz 0.01 0.1 0.1 27 35 2 10 27 35 1.0 7 35 1.0 7 5 3 2 2 7 7 5 3 v ds =10v 75 c ta= --25 c 25 c 10 7 5 3 | y fs | -- i d forward transfer admittance, | y fs | -- s it15538 --60 20 120 40 90 70 140 60 30 50 100 130 150 110 80 160 --40 --20 0 20 40 60 80 100 120 140 160 v gs =4.5v, i d =0.75a v gs =10.0v, i d =1.5a v gs =4.0v, i d =0.75a 0481214 2 6 10 16 it15537 170 30 40 60 50 70 90 80 130 110 100 140 120 160 150 ta=25 c i d =0.75a 1.5a i d -- v ds i d -- v gs drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a 2.0 3.0 5.5 6.0 1.0 1.5 4.0 2.5 3.5 0.5 4.5 5.0 0 0 1.0 2.0 4.0 4.5 0.2 0.1 3.0 1.5 0.5 2.5 3.5 0 0.4 1.0 0.8 0.6 0.3 0.5 0.9 0.7 it13789 0 0.5 1.0 2.0 3.0 1.5 2.5 3.5 4.0 it13790 ta=75 c -- 2 5 c 4.0v 3.5v 3.0v v ds =10v 15.0v 10.0v 25 c 4.5v v gs =2.5v 7.0v
vec2415 no. a1713-4/7 a s o drain-to-source voltage, v ds -- v drain current, i d -- a p d -- ta allowable power dissipation, p d -- w ambient temperature, ta -- c v gs -- qg total gate charge, qg -- nc gate-to-source voltage, v gs -- v 0479 6 23 5 1810 0 4 6 8 10 9 7 5 1 2 3 it13797 v ds =30v i d =3a it15520 0 0 20 40 0.4 0.6 60 80 100 120 140 160 1.0 0.2 0.8 0.9 1.2 1unit total dissipation it15519 0.01 0.1 23 5 23 57 7 1.0 23 57 2 0.01 2 0.1 1.0 10 2 3 3 5 7 2 3 5 7 2 3 5 7 i dp =12a (pw 10 s) i d =3a 100 s dc operation (ta=25 c) 1ms 100ms 10ms operation in this area is limited by r ds (on). 10 100 357 when mounted on ceramic substrate (900mm 2 0.8mm) ta=25 c single pulse when mounted on ceramic substrate (900mm 2 0.8mm) 1unit
vec2415 no. a1713-5/7 taping speci cation VEC2415-TL-E
vec2415 no. a1713-6/7 outline drawing land pattern example VEC2415-TL-E mass (g) unit 0.015 * for reference mm unit: mm 0.4 0.6 2.8 0.65
vec2415 ps no. a1713-7/7 note on usage : since the vec2415 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc). scillc owns th e rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of scillc?s product/patent covera ge may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc ass ume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchas e or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the d esign or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws a nd is not for resale in any manner.
|
